Open AccessEffect of mask-film properties on the initial GaAs nanowire growth stages
Author(s) -
Pavel V. Zhikharev,
Nataliya L. Shwartz
Publication year - 2022
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/2227/1/012015
Subject(s) - nanowire , materials science , etching (microfabrication) , substrate (aquarium) , nanotechnology , optoelectronics , drop (telecommunication) , isotropic etching , gallium , resist , layer (electronics) , metallurgy , telecommunications , oceanography , computer science , geology
The initial self-catalyze GaAs nanowire (NW) growth stages were studied using Monte Carlo simulation. We analyzed the effect of the mask-film etching rate with liquid gallium for different thicknesses on the initial nanowire formation stages. At a high etching rate NWs do not form on thick mask-films. A high etching rate of a thin film-mask can lead to lateral Ga drop motion over the crystalline substrate surface, which delays the nanowire formation onset. It is shown that, for the NW formation, it is necessary to maintain the correct ratio between the film thickness, etching rate, Ga and As 2 flux intensities.