Open AccessInvestigation of infrared photoluminescence spectra of Ge1-x-y Si x Sn y /Si nanostructures
Author(s) -
Dmitry V. Kolyada,
A A Karaborchev,
Д. Д. Фирсов,
V. I. Mashanov,
В. А. Тимофеев,
О. С. Комков
Publication year - 2022
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/2227/1/012009
Subject(s) - photoluminescence , superlattice , materials science , molecular beam epitaxy , luminescence , silicon , epitaxy , spectral line , etching (microfabrication) , analytical chemistry (journal) , optoelectronics , crystallography , nanotechnology , chemistry , physics , layer (electronics) , chromatography , astronomy
This work investigates the luminescence properties of pseudomorphic nanostructures with Ge 1- x - y Si x Sn y /Si superlattices (SL) grown on silicon substrates by molecular beam epitaxy. It was shown that the addition of Sn ( y = 0.07) to the alloy layers within the structures results in a significant shift of the photoluminescence (PL) spectra towards longer wavelengths (2.0-3.5 μm) compared to similar Ge 0.7 Si 0.3 /Si superlattices. A series of experiments involving etching the structures to different depths have shown that the observed photoluminescence occurs exactly in the Ge 1- x - y Si x Sn y /Si SL region, with the sublinear nature of the PL power dependence indicating the probable participation of defects in radiative recombination. A significant increase in low-temperature PL was observed with a decrease in the thickness of narrow-gap SL layers from 6 to 2 nm, as well as with an increase in the number of superlattice periods from 10 to 30. The obtained structures exhibit relatively good temperature stability of luminescence, which is preserved up to 160 K. Thus, the current work demonstrates the possibility of creating mid-wave IR emitting epitaxial structures on silicon substrates.