Open AccessCVD synthesis of boron nitride from a solid precursor
Author(s) -
Ivan I. Kondrashov,
A Y Pereyaslavtsev,
E. D. Obraztsova,
Maxim Rybin
Publication year - 2022
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/2227/1/012006
Subject(s) - boron nitride , ammonia borane , materials science , raman spectroscopy , nitride , boron , substrate (aquarium) , chemical vapor deposition , chemical engineering , foil method , catalysis , nitrogen , metal , copper , inorganic chemistry , nanotechnology , metallurgy , chemistry , composite material , organic chemistry , optics , physics , oceanography , alloy , layer (electronics) , engineering , geology , hydrogen storage
Here we report on the studies of the controllable synthesis of large area boron nitride films by the resistive heating method on a metal substrate without using a dangerous boron and nitrogen containing gases. In our original home-made CVD setup, we used the copper foil as a metal catalytic substrate. With the solid precursor of ammonia borane, the boron nitride films were synthesized under low pressure conditions and at a growth temperature of about 1000°C. We obtained the films with an area of up to 1x1 cm 2 by varying the synthesis parameters. The quality of boron nitride films was characterized using Raman spectroscopy and X-ray spectroscopy.