Open AccessCharacteristics of the growth and composition of AlxGa1-xN/AlN/Si heterostructures with the use of the buffer layer of porous silicon
Author(s) -
A. S. Lenshin,
D. S. Zolotukhin,
A. L. Bel’tyukov,
П. В. Середин,
A. M. Mizerov
Publication year - 2022
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/2227/1/012005
Subject(s) - heterojunction , materials science , silicon , epitaxy , layer (electronics) , monocrystalline silicon , wafer , buffer (optical fiber) , nanoporous , porous silicon , optoelectronics , chemical engineering , nanotechnology , telecommunications , computer science , engineering
The work is concerned with the efficiency of inclusion of the additional layer of por-Si applied as a buffer into the growth technology of AlxGa1-xN/AlN/Si as well as its influence on the morphological parameters and composition of surface of the grown heterostructures. In the course of the study, it was found that the heterostructure grown using a nanoporous por-Si buffer layer on a Si(111) n-type monocrystalline silicon wafer has a more homogeneous structure of the epitaxial layer and its surface morphology.