Open AccessFormation of the diluted magnetic semiconductor phase by thermal diffusion in the pulsed laser deposition method
Author(s) -
Yu. M. Kuznetsov,
М. В. Дорохин,
R. N. Kriukov,
A. V. Zdoroveyshchev,
D A Zdoroveyshchev,
В. П. Лесников
Publication year - 2022
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/2227/1/012003
Subject(s) - magnetic semiconductor , materials science , pulsed laser deposition , diffusion , analytical chemistry (journal) , ferromagnetism , doping , x ray photoelectron spectroscopy , deposition (geology) , hall effect , magnetic field , semiconductor , gallium arsenide , nuclear magnetic resonance , condensed matter physics , thin film , optoelectronics , chemistry , nanotechnology , thermodynamics , paleontology , physics , chromatography , sediment , quantum mechanics , biology
A new method for the formation of a diluted magnetic semiconductor based on gallium arsenide doped with iron and manganese atoms is considered. The method consists in diffusion doping during pulsed laser deposition in vacuum. Using the method of X-ray photoelectron spectroscopy, the profile of the chemical elements distribution was obtained. The magnetic phases influence on the behavior of the magnetic field dependence of the Hall resistance is analyzed. The technological parameters for the growth of the structure exhibiting ferromagnetic properties at room temperature were selected.