Open AccessDifferent parameter values of Gaussian function analysis on EMI reduction and switching loss in active gate drive of SiC MOSFET
Author(s) -
Chentao Li,
Qian Ma,
Peng Xu
Publication year - 2022
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/2196/1/012033
Subject(s) - emi , electromagnetic interference , gaussian , power electronics , power semiconductor device , electronic engineering , mosfet , electronics , electromagnetic compatibility , conducted electromagnetic interference , gaussian function , reduction (mathematics) , electrical engineering , computer science , transistor , engineering , mathematics , physics , voltage , quantum mechanics , geometry
Nowadays, wide bandgap(WBG) devices named SiC and GaN were widely used in power electronics system to improve power density and switching speed, meanwhile, electromagnetic interference(EMI) becomes a major drawback in power electronics system based on wide bandgap devices. This article discusses the influence of different parameter values in Gaussian function on EMI suppression, and a trade-off between EMI and losses was also discussed. Experiments were given in this article to analyze different parameter values effect on EMI reduction. This article can give guidance in the Gaussian function generated when used in active gate drive to reduce EMI.