Open AccessSC Curreent Interruption Capability and Protection of SiC Based Solid State Circuit Breaker
Author(s) -
Mingyu Tian,
Yu Ren,
Shipeng Tian,
Yue Tan
Publication year - 2022
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/2196/1/012028
Subject(s) - circuit breaker , silicon carbide , inductance , electrical engineering , saturation current , materials science , short circuit , voltage , mosfet , engineering , composite material , transistor
This paper presents the short circuit (SC) current interruption capability of a 1.7 kV/72 A silicon carbide (SiC) MOSFET based solid state circuit breaker (SSCB). The interruption process of SSCB is introduced in detail. A test platform is built and the SSCB is tested and discussed at various DC-link voltage, fault inductance and junction temperature. Before the desaturation point ( V DS =200 V), SSCB can successfully turn off the SC current. The saturation value of the SC current is positively correlated with di/dt , and the effect of junction temperature (50-150°C) on saturation current is not significant. A SC protection circuit with a response time of 260 ns is proposed and is validated through the test platform.