Open AccessEffect of the Electromagnetic Susceptibility of Metal Interconnects: A Simulation Study
Author(s) -
Jian-Yang Lin,
Shulong Wang,
Baowei Nie,
Hongxia Liu
Publication year - 2022
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/2179/1/012005
Subject(s) - electromotive force , electromagnetic pulse , electromigration , interconnection , electromagnetic field , electronic circuit , counter electromotive force , pulse (music) , materials science , electromagnetic compatibility , electrical engineering , electromagnetic environment , electronic engineering , current (fluid) , optoelectronics , physics , computer science , voltage , engineering , telecommunications , quantum mechanics
Large induced electromotive force will be generated on the metal interconnections under the action of strong electromagnetic pulse, thereby generating a large induced current. For copper metal interconnects commonly used in modern integrated circuits, large currents will cause electromigration, resulting in short or open in the circuit, causing damage to devices and circuits. In order to study the damage of metal interconnects under the action of electromagnetic pulse, in this paper, the induced electromotive force of metal interconnects under the action of HPM is derived through theoretical analysis, then analyzing the influence of different electromagnetic pulse parameters on the induced electromotive force of interconnects by the use of electromagnetic simulation software COMSOL. Using the established metal interconnect model, the electromagnetic sensitivity effect of metal interconnect is studied by analyzing the electric field distribution, current density and temperature distribution on the interconnect under electromagnetic pulse.