
Dimethylamine Exchanging of a New Hole Transport Material for Highly efficient CsPbI2Br solar cells
Author(s) -
Ze Wang,
Jiantuo Gan,
Xiaodong Liu,
M. Shao,
Tong Bie,
Liang Qiao,
Yonghao Zheng
Publication year - 2022
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/2174/1/012027
Subject(s) - perovskite (structure) , energy conversion efficiency , materials science , thermal stability , dimethylamine , optoelectronics , current density , layer (electronics) , nickel , chemical engineering , nanotechnology , chemistry , physics , organic chemistry , quantum mechanics , engineering , metallurgy
All inorganic α-CsPbI 2 Br films with a large open circuit voltage ( V OC ) and excellent thermal stability are promising for highly stable and efficient perovskite solar cells (PSCs). However, its device performance is limited by a low short circuit current density ( J SC ) and low V OC , which is strongly related to the energy misalignment and defects recombination at the perovskite/transport layer interfaces. In this work, we develop two Ni based polymers: bis (dithiobenzil) nickel (II) (BDTB) and bis(4-dimethylaminodithiobenzil) nickel (II) (BDMA), and use them as the hole transport layer for α-CsPbI 2 Br PSCs. As compared to BDTB based reference device (PCE ~3.2%), BDMA based device demonstrate a simultaneous increase on V OC , J SC and fill factor (FF), resulting in a remarkable power conversion efficiency (PCE) of 13.32 %. We attribute the improved device performance to a better interfacial alignment, the reduced defect recombination and improved charge extraction. Moreover, the BDMA based devices also exhibit an improved shelf-life stability than BDTB control device, which sustain over 80 % of PCE after 50 days in ambient air.