Open AccessPerformance Improvement in E-Gun Deposited SiOx- Based RRAM Device by Switching Material Thickness Reduction
Author(s) -
Sourav Roy,
S. Maikap
Publication year - 2022
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/2161/1/012040
Subject(s) - materials science , reset (finance) , resistive random access memory , reduction (mathematics) , optoelectronics , reliability (semiconductor) , current (fluid) , electrical engineering , voltage , power (physics) , engineering , geometry , mathematics , physics , quantum mechanics , financial economics , economics
A performance improvement by reduction in switching material thickness in a e-gun deposited SiOx based resistive switching memory device was investigated. Reduction in thickness cause thinner filamentary path formation during ON-state by controlling the vacancy defects. Thinner filament cause lowering of operation current from 500 μA to 100 μA and also improves the reset current (from >400 μA to 200 dc endurance, >3-hour data retention and >1000 P/E endurance with 100 ns pulses.