Open AccessAnalysis on Influence of Hydrogen Content Exceeding Standard in GaAs Device
Author(s) -
Yan Song,
Pin Wen,
Xi Hua,
Zhao Yang,
Tao Xu,
Dong Zhou
Publication year - 2022
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/2160/1/012006
Subject(s) - hydrogen , content (measure theory) , materials science , analytical chemistry (journal) , chemistry , physics , mathematics , environmental chemistry , quantum mechanics , mathematical analysis
Aiming at the problem of hydrogen content exceeding the standard in GaAs device, the influence mechanism of hydrogen content exceeding the standard on the device is analyzed, the failure model of hydrogen content exceeding the standard in GaAs device in engineering is given, the source of hydrogen is analyzed, and the protective measures of hydrogen content exceeding the standard are given. It is of certain guiding significance for future engineering application.