Open AccessRadiation-doped SiC*/Si heterostructure formation and defects evolution
Author(s) -
В. И. Чепурнов,
M. V. Dolgopolov,
A. V. Gurskaya,
Galina Puzyrnaya,
D E Elkhimov
Publication year - 2022
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/2155/1/012012
Subject(s) - heterojunction , materials science , silicon carbide , doping , silicon , crystallographic defect , impurity , optoelectronics , engineering physics , nanotechnology , condensed matter physics , metallurgy , chemistry , physics , organic chemistry
The authors consider heterostructures of silicon carbide obtained during endotaxy on silicon substrates. The question is raised in connection with the description of the endotaxy process itself at the structural level. Authors focus on the technological aspects of the formation of a stable β-SiC/Si heterostructure by endotaxy in relation to the evolution of point defects of various nature and their probable association models with the participation of a radionuclide impurity at the micro-alloying level: 1) the growth of the SiC*/Si thin layer with C-14 atoms in the doping process; 2) physical properties of defects formation; 3) some interface between properties and efficiency.