Open AccessCarbon-Based Micro/Nano Devices for Transistors, Sensors, and Memories
Author(s) -
Guida Lin
Publication year - 2022
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/2152/1/012033
Subject(s) - graphene , materials science , carbon nanotube , nanotechnology , nano , transistor , field effect transistor , ballistic conduction , electronics , optoelectronics , electron , electrical engineering , voltage , composite material , engineering , physics , quantum mechanics
The ballistic transport of electrons and unique structural characteristics of graphene and carbon nanotubes enable them to play an important role in nano electronical appliances. Nanodevices based on carbon nano materials can further reduce device size without affecting performance. Here, this paper analyzes Fin Field-effect transistor (FinFET) and Tunnel Field-effect transistor (TFET) based on graphene nanoribbon (GNR) and carbon nanotube which could be used for reducing power consumption. Then it summarizes the applications of graphene in micro/nano sensors based on the electrical, mechanical, optical, and thermal properties of graphene. Graphene’s single-atom thickness and charge storage mechanism provide itself with great potential in the field of resistive memory. Graphene is also widely used in flexible electronic devices.