Open AccessEffect of Annealing Process on the Dielectric and Tunable Properties of (Bi1.5Zn0.5)(Nb0.5Ti1.5)O7(BZNT) Thin Film
Author(s) -
Yijian Ma,
Shuang Hou,
Linfeng Lv,
Jiatian Zhang
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/2133/1/012009
Subject(s) - annealing (glass) , materials science , dielectric , sputter deposition , dielectric loss , thin film , composite material , sputtering , optoelectronics , electronic engineering , nanotechnology , engineering
Bi1.5Zn0.5Nb0.5Ti1.5O7 (BZNT) thin films were deposited on Pt/Ti/SiO2/Si substrates by radio frequency (rf) magnetron sputtering. In this paper, by studying the phase structure, surface morphology, and dielectric properties of BZNT films, it is found that by increasing the initial temperature in the annealing process, the film formation quality, internal stress and dielectric properties of the film can be improved. and the best performance of the BZNT film is obtained under the annealing process at the initial temperature of 500°C. The tuning amount (Tu), Dielectric loss (Loss) and quality factor (FOM) are: 13.55 percent, 0.00298 and 45.46, respectively.