Open AccessElectric-field-tunable linear unipolar magnetic switch based on a spin-valve multiferroic heterostructure
Author(s) -
Mengli Liu,
Wei Du,
Hua Su,
Bo Liu,
Hao Meng,
Xiaoli Tang
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/2132/1/012040
Subject(s) - condensed matter physics , multiferroics , materials science , magnetoresistance , electric field , magnetization , heterojunction , magnetic field , antiferromagnetism , ferromagnetism , spin valve , giant magnetoresistance , optoelectronics , physics , ferroelectricity , quantum mechanics , dielectric
This work reports an energy-efficient strategy for realizing linear unipolar giant magnetoresistance (GMR) switch by using electric fields (E-fields). Herein, a modified spin-valve (SV) structure of double antiferromagnetic (AFM) pinning layers was adopted. Since the magnetization direction of ferromagnetic (FM) layer can be controlled via the strain-mediated magnetoelectric (ME) effect, a multiferroic heterostructure of SV/PMN-PT was fabricated. By applying an E-field on the PMN-PT substrate, an effective magnetic field H eff was produced along the [1-10] direction of PMN-PT. It can turn the magnetic moments of FM layer toward [1-10] direction. Accordingly, a linear GMR curve with a wide sensing field range was achieved. This E-field-induced linear magnetic switch can satisfy the demand for different switching field ranges in the same application system.