Open AccessModeling and analysis of the characteristics of SiC MOSFET
Author(s) -
Guoqing Qiu,
Kedi Jiang,
Shengyou Xu,
Xin Yang,
Wei Wang
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/2125/1/012051
Subject(s) - mosfet , computer science , waveform , electronic engineering , power mosfet , matlab , power (physics) , electrical engineering , voltage , engineering , transistor , telecommunications , radar , physics , quantum mechanics , operating system
Although the superior performance of SiC MOSFET devices has beenvalidated by many studies, it is necessary to overcome many technical bottlenecks to make SiC MOSFET gradually replace Si-based power devices into the mainstream. In view of the current situation where the performance of SiC MOSFETs in power conversion devices cannot be evaluated well at this stage, it is necessary to carry out fine modeling of SiC MOSFETs and establish accurate simulation models. In this paper, the powerful mathematical processing capability and rich modules of Matlab/Simulink are used to build a SiC MOSFET model, and then the product data sheet is compared with the fitted data. The results show that the switching simulation waveforms are in general agreement with the data sheet waveforms, and the error is less than 7%. Verifing the accuracy of the model and reducing the difficulty of modeling, it provides a new idea for establishing the circuit simulation model of SiC MOSFET in Matlab/Simulink.