Open AccessModeling electron transfer from the barrier in InAs/GaAs quantum dot-well structure
Author(s) -
Igor Filikhin,
Yu.B. Kuzmichev,
Vojislav V. Mitić,
Th. Peterson,
Branislav Vlahović
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/2122/1/012011
Subject(s) - quantum tunnelling , delocalized electron , heterojunction , quantum dot , condensed matter physics , quantum well , electron , quantum point contact , physics , quantum , materials science , quantum mechanics , laser
We study single electron tunnelling from the barrier in the binary InAs/GaAs quantum structure including quantum well (QW) and quantum dot (QD). The tunneling is described in the terms of localized/delocalized states and their spectral distribution. The modeling is performed by using the phenomenological efective potential approach for InAs/GaAs heterostructures. The results for the two and three-dimensional models are presented. We focus on the efect of QD-QW geometry variations. The relation to the PL experiments is shown.