Open AccessSchottky diodes based on 4H-SiC epitaxial layers
Author(s) -
Anatoly M. Strel’chuk,
E. V. Kalinina
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/2103/1/012235
Subject(s) - schottky diode , epitaxy , optoelectronics , schottky barrier , materials science , diode , metal–semiconductor junction , doping , layer (electronics) , nanotechnology
Forward and reverse current-voltage (IV) characteristics of Cr-SiC (4H) Schottky diodes based on epitaxial layers with doping (1-3)· 10 15 cm -3 were studied in the temperature range of 300-550 K. It is shown that in many cases the IV characteristics are close to ideal, but a significant spread of the forward IV characteristics of diodes manufactured in the same way on the same epitaxial layer was found, probably due to the spread of the Schottky barrier heights reaching 0.3 eV. Heating of the diode, as well as packaging, can also change the Schottky barrier height. An alternative explanation suggests the presence of a powerful shunt.