Open AccessElectronic structure of thermally oxidized tungsten
Author(s) -
S. N. Timoshnev,
P. A. Dementev,
E. V. Dementeva,
M. N. Lapushkin,
Д. А. Смирнов
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/2103/1/012234
Subject(s) - tungsten , oxidation state , valence (chemistry) , torr , materials science , x ray photoelectron spectroscopy , analytical chemistry (journal) , ionization , thermal ionization , chemistry , inorganic chemistry , metallurgy , chemical engineering , electron ionization , ion , metal , physics , organic chemistry , chromatography , thermodynamics , engineering
The electronic structure of thermally oxidized tungsten used as an emitter in thermal ionization of organic molecules is studied. Tungsten foil was thermally oxidized at oxygen pressure 1 Torr and temperature 950 K. The photoemission spectra from the valence band and O 2s and W 4f core levels are studied under synchrotron excitation with the photon energies 100 ÷ 600 eV. It is shown that thermal oxidation of tungsten leads to the formation in the W near-surface region various tungsten oxides with an oxidation state from 6+ to 4+. In this case, mainly tungsten oxides with an oxidation state of 6+ are formed on the surface, the proportion of which gradually decreases with distance from the surface with an increase in tungsten oxides with an oxidation state of 4+.