Open AccessThe model of degradation of an InGaN/GaN LED during current tests taking into account the inhomogeneous distribution of the defects density in the heterostructure
Author(s) -
I. V. Frolov,
A. M. Hodakov,
В. А. Сергеев,
О. А. Radaev
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/2103/1/012177
Subject(s) - materials science , light emitting diode , degradation (telecommunications) , heterojunction , optoelectronics , power density , power (physics) , distribution (mathematics) , gallium nitride , current density , electronic engineering , physics , composite material , mathematics , thermodynamics , mathematical analysis , layer (electronics) , quantum mechanics , engineering
A model of the optical power degradation of an InGaN/GaN LED during testing under direct current, which takes into account the inhomogeneous distribution of the defects density in the heterostructure, is presented. According to the simulation results, the rate of degradation of the LED optical power significantly depends on the degree of inhomogeneity of the defects density distribution profile. Experimental testing of the model has been carried out. The proposed model makes it possible to predict the rate of degradation of InGaN-based LEDs with varying degrees of inhomogeneity of the defects density distribution profile and can be used to develop a technique for rejecting defective and potentially unreliable LEDs.