Open AccessVertical cavity surface emitting lasers of 1.3 μm spectral range based on the InGaAs/InGaAlAs superlattice
Author(s) -
S. S. Rochas,
Liu Ya,
A. V. Babichev,
I. I. Novikov,
A. G. Gladyshev,
E. S. Kolodeznyi,
P. E. Kopytov,
V. E. Bougrov,
S. A. Blokhin,
A. A. Blokhin,
K. O. Voropaev,
A. Yu. Egorov
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/2103/1/012176
Subject(s) - optoelectronics , superlattice , materials science , heterojunction , molecular beam epitaxy , laser , vertical cavity surface emitting laser , wafer , semiconductor laser theory , epitaxy , quantum well , gallium arsenide , optics , semiconductor , layer (electronics) , nanotechnology , physics
Vertical-cavity surface-emitting lasers of 1.3 μm spectral range with the active region based on the InGaAs/InGaAlAs superlattice were studied. VCSEL heterostructure was formed by a wafer-fusion of the heterostructure with an active region and two DBRs grown by molecular-beam epitaxy on InP and GaAs substrates respectively. Fabricated VCSELs have shown threshold current below 1.6 mA and frequency of small signal modulation near 9 GHz at 20°C.