Open AccessInfluence of the aluminum content on the luminescent and electronic properties of β-Ga2O3
Author(s) -
E. V. Dementeva,
P. A. Dementev,
A. V. Kremleva,
D. Yu. Panov,
А. Е. Романов,
V. E. Bugrov,
M. V. Zamoryanskaya
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/2103/1/012167
Subject(s) - luminescence , aluminium , analytical chemistry (journal) , materials science , dissipation , charge (physics) , kelvin probe force microscope , mineralogy , chemistry , metallurgy , nanotechnology , atomic force microscopy , thermodynamics , optoelectronics , physics , environmental chemistry , quantum mechanics
In this work, we investigated bulk β-Ga 2 O 3 samples grown by the Czochralski method on Al 2 O 3 and β-Ga 2 O 3 seeds. The elemental composition of the samples and its effect on the luminescent and electrophysical properties of the samples were determined. The Kelvin probe microscopy was used to study the processes of localization and dissipation of charges in the samples. It was shown that in a β-Ga 2 O 3 sample grown on an Al 2 O 3 seed, the characteristic charge dissipation time is 10 times longer.