Open AccessAnalysis of the sharpness of interfaces in short-period GaN/AlN superlattices using Raman spectroscopy data
Author(s) -
Yu V Davydov,
E. M. Roginskiĭ,
Yu. É. Kitaev,
А. Н. Смирнов,
I. A. Eliseyev,
S. N. Rodin,
Е. Е. Заварин,
W. V. Lundin,
Д. В. Нечаев,
Valentin Jmerik,
M. B. Smirnov
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/2103/1/012147
Subject(s) - raman spectroscopy , superlattice , materials science , phonon , ab initio , interface (matter) , metalorganic vapour phase epitaxy , period (music) , spectral line , diffusion , condensed matter physics , optoelectronics , molecular physics , optics , nanotechnology , chemistry , epitaxy , physics , layer (electronics) , thermodynamics , composite material , organic chemistry , capillary number , astronomy , capillary action , acoustics
The results of joint theoretical and experimental studies aimed at revealing features in the Raman spectra, which can be used for evaluation of the interface quality between GaN and AlN layers in short-period GaN/AlN superlattices (SLs) are presented. The Raman spectra for SLs with sharp interface and with different degree of interface diffusion are simulated by ab initio calculations and within the framework of random-element isodisplacement model, respectively. The comparison of the results of theoretical calculations and experimental data obtained on PA MBE and MOVPE grown SLs, leads to conclusion that the spectral region of the A 1 (LO) confined phonons is very sensitive to the degree of interface sharpness. As a result of comprehensive studies, the correlations between the parameters of the A 1 (LO) confined phonons and the structure of SLs are obtained. The results of the complex studies can be used to optimize the parameters of the growth process in order to form structurally perfect short-period GaN/AlN SLs.