Open AccessInfluence of α-particles irradiation on the properties and performance of silicon semiconductor detectors
Author(s) -
С. В. Бахланов,
N. V. Bazlov,
Ilia Chernobrovkin,
A. Derbin,
I. Drachnev,
I. M. Kotina,
O. I. Kon’kov,
A M Kuzmichev,
M S Mikulich,
V. Muratova,
Maxim V. Trushin,
E. Unzhakov
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/2103/1/012139
Subject(s) - irradiation , detector , silicon , semiconductor , materials science , semiconductor detector , optoelectronics , alpha particle , radiation , particle detector , valence band , atomic physics , analytical chemistry (journal) , optics , physics , chemistry , nuclear physics , band gap , chromatography
Deterioration of the operation parameters of p-type Si surface-barrier detector and Si(Li) p-i-n detector upon irradiation by alpha-particles was investigated. The detectors were irradiated at room temperature up to a total number of the registered α-particles N α equal to 6 × 10 9 . Prolonged irradiation has resulted in a deterioration of the detectors energy resolution ability and it was found that the increase of α-peaks broadening can be described by a linear function of N α with a slope Δσ/Δ N α ∼ (1.4–1.8) × 10 –9 keV/α for both detectors. Resolution deterioration was associated with the increase of the detectors leakage current, which proceeds linearly with the number of absorbed α-particles with the slope ΔI/Δ Nα ∼ (7-17) × 10 -17 A/α. The increase of the detectors reverse current was related with appearance of radiation-induced defect level at 0.56 eV above the valence band.