Open AccessProcesses of formation of epitaxial arrays of self-catalytic GaP nanowires on Si (111)
Author(s) -
Sergey V. Fedina,
Vladimir V. Fedorov,
Yury Berdnikov,
G. A. Sapunov,
I. S. Mukhin
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/2103/1/012127
Subject(s) - nucleation , nanowire , molecular beam epitaxy , materials science , epitaxy , chemical physics , catalysis , optoelectronics , nanotechnology , chemical engineering , chemistry , layer (electronics) , organic chemistry , engineering , biochemistry
This study is devoted to the investigation of the effect of growth conditions (growth temperature, values of molecular beam fluxes) on the formation of self-catalytic GaP NW on Si(111), namely surface density, orientation and NW morphology. Nanowire arrays were grown on Si (111) by the plasma-assisted molecular beam epitaxy. It was determined that an increase of the temperature and a decrease of the Ga flux, while maintaining the V/III ratio, reduces the inclined NWs and parasitic islands nucleation probability.