Open AccessAluminum diffusion during laser-stimulated crystallization of thin silicon films
Author(s) -
S O Solodovnikova,
L.D. Volkovoynova,
Alexey A. Serdobintsev,
A. V. Starodubov,
Ilya O. Kozhevnikov,
A. P. Pavlov
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/2103/1/012123
Subject(s) - crystallization , diffusion , materials science , silicon , laser , amorphous silicon , amorphous solid , irradiation , aluminium , optoelectronics , thin film , crystalline silicon , optics , crystallography , chemical engineering , composite material , nanotechnology , chemistry , thermodynamics , physics , nuclear physics , engineering
Diffusion of aluminum in amorphous silicon films during crystallization through infrared laser irradiation was studied. Diffusion regime was found to change from limited source to abundant source diffusion at higher laser source power. At the same time, crystalline structure of the obtained samples becomes more perfect, which is more characteristic to limited source diffusion mode.