Open AccessConstruction of barrier heterostructures based on carbon and organometallic compounds
Author(s) -
А. С. Мазинов,
Vladimir S. Gurchenko,
A. S. Tyutyunik,
Veronika Yu. Ilina,
A. I. Dmitriev
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/2103/1/012111
Subject(s) - heterojunction , fullerene , luminescence , zinc , materials science , layer (electronics) , optoelectronics , active layer , carbon fibers , nanotechnology , thin film , chemical engineering , chemistry , composite number , organic chemistry , composite material , metallurgy , engineering , thin film transistor
This paper presents the results of using hybrid-organic zinc complex C 24 H 24 N 6 O 3 Zn as a component for creating fullerene C 60 -based heterostructures. The synthesis technique of the complex compound, the microscopy of the film surfaces obtained, their optical and luminescence properties are described in the paper. The introduction of zinc complex to fullerene shows that there occurs a potential barrier at the active layer interface. The obtained thin-film structures have rectifying light volt-ampere characteristics.