Open AccessWafer fusion technique features for near-IR laser sources
Author(s) -
S. S. Rochas,
I. I. Novikov,
L. Ya. Karachinsky,
A. V. Babichev,
S. A. Blokhin,
V. N. Nevedomskiy,
K. O. Voropaev,
A. Yu. Egorov
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/2103/1/012107
Subject(s) - wafer , optoelectronics , materials science , heterojunction , homogeneity (statistics) , semiconductor , planarity testing , molecular beam epitaxy , fusion , laser , epitaxy , compound semiconductor , semiconductor materials , nanotechnology , optics , crystallography , chemistry , computer science , linguistics , philosophy , physics , layer (electronics) , machine learning
The paper presents the results of studies of the conditions for the formation of A3B5 compound semiconductors heterointerfaces including InP, InGaAsP and GaAs layers. The heterostructures were grown by molecular-beam epitaxy and were fused by wafer fusion technique. Improvement of planarity and homogeneity over the thickness of heterointerface due to using optimized preliminary preparation of semiconductor wafer surfaces was demonstrated. No additional extended defects such as dislocations were found.