Open AccessStructure of GaN grown from vapour phase on a seeded layer of gallium melt formed on a boron nitride ceramic substrate
Author(s) -
M. G. Mynbaeva
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/2103/1/012097
Subject(s) - materials science , substrate (aquarium) , ceramic , gallium , nucleation , wetting , layer (electronics) , epitaxy , gallium nitride , optoelectronics , phase (matter) , boron nitride , hydride , crystallite , composite material , metallurgy , metal , chemistry , oceanography , organic chemistry , geology
In this study, two empirical models for the growth of millimetre–thick GaN material with either highly ordered textured or polycrystalline structure on a ceramic substrate by Hydride Vapour Phase Epitaxy (HVPE) are considered. It is suggested that the specific type of the structure of GaN is determined at the nucleation stage and depends on the character of the wetting of the surface of the substrate by the liquid gallium melt.