Open AccessInvestigation of defects in structures based on BP/Si heterojunction
Author(s) -
A. A. Maksimova,
Artem Baranov,
A. V. Uvarov,
D. A. Kudryashov,
A. S. Gudovskikh,
И. А. Морозов,
Sylvain Le Gall,
JeanPaul Kleider
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/2103/1/012088
Subject(s) - deep level transient spectroscopy , heterojunction , spectroscopy , conduction band , materials science , capacitance , admittance , optoelectronics , analytical chemistry (journal) , electron , silicon , chemistry , electrical engineering , physics , electrical impedance , electrode , quantum mechanics , chromatography , engineering
In this work the properties of the BP/Si heterojunction interface were investigated by capacitance methods, the deep levels transient spectroscopy method and admittance spectroscopy. Admittance spectroscopy did not detect any defects, but the deep level transient spectroscopy showed response with activation energy of 0.33 eV and capture cross-section σ n =(1-10)·10 -19 cm 2 and defect concentration (NT) is in the order of 10 13 cm -3 . This defect level is a trap for electron with position of 0.33 eV below the conduction band in region near the BP/Si interface.