Open AccessThe dependence of surface morphology on the growth temperature of the Pb0.7Sn0.3Te/Si(111) topological insulator thin films
Author(s) -
А. К. Кавеев,
Dmitry Bondarenko,
O. E. Tereshchenko
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/2103/1/012086
Subject(s) - epitaxy , topological insulator , morphology (biology) , materials science , condensed matter physics , surface (topology) , insulator (electricity) , thin film , layer (electronics) , nanotechnology , optoelectronics , geometry , physics , geology , mathematics , paleontology
The possibility of epitaxial growth of Pb 0.7 Sn 0.3 Te crystalline topological insulator films on the Si(111) surface was shown and epitaxial relations were found. It was shown that, depending on the growth temperature, it is possible to control not only the character of the morphology, but also, to a significant extent, the smoothness of the epitaxial layer surface, which is extremely important for further transport measurements of the films. Analysis of the grown films surface morphology made it possible to establish the average value of the height and lateral size of the terraces and islands forming Pb 0.7 Sn 0.3 Te surface.