Open AccessKelvin-probe microscopy as a technique of estimation of the charge traps saturation time
Author(s) -
P. A. Dementev,
E. V. Dementeva
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/2103/1/012067
Subject(s) - saturation (graph theory) , dielectric , materials science , kelvin probe force microscope , hafnium , work (physics) , residual , analytical chemistry (journal) , optics , optoelectronics , chemistry , nanotechnology , physics , atomic force microscopy , computer science , algorithm , thermodynamics , mathematics , zirconium , combinatorics , chromatography , metallurgy
In this work, a method for estimating the saturation time of traps in dielectric layers based on the KPM is proposed. Using hafnium oxide layers as an example, it is shown that when charging with a series of points with different durations, a different dependence of the residual potential on time is observed. It is assumed that this technique makes it possible to evaluate the performance of devices based on dielectric layers.