Open AccessInfluence of low-energy proton irradiation on the effective lifetime in the space charge region of silicon n+-p junctions
Author(s) -
Н. М. Богатов,
L. R. Grigoryan,
М. С. Коваленко,
V. S. Volodin,
M A Voloshin
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/2094/2/022006
Subject(s) - irradiation , proton , silicon , space charge , photodiode , energy (signal processing) , atomic physics , depletion region , charge (physics) , materials science , p–n junction , modulation (music) , space (punctuation) , optoelectronics , physics , semiconductor , electron , nuclear physics , linguistics , philosophy , quantum mechanics , acoustics
The effect of low-energy proton irradiation on the pulse characteristics of silicon n + -p-p + structures is analyzed. It is shown that irradiation with protons with an energy of 180 keV and a dose of 10 15 cm −2 creates a region with an effective lifetime of 5.5·10 −8 s in the space charge region of the n + -p junction. Such elements can be used to create high-speed photodiodes with an operating modulation frequency of 18 MHz.