Open AccessIon implantation enhanced formation of 3C-SiC grains at the SiO2/Si interface after annealing in CO gas
Author(s) -
B. Pécz,
J. Stoëmenos,
M. Voelskow,
W. Skorupa,
László Dobos,
Anita Pongrácz,
G. Battistig
Publication year - 2010
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/209/1/012045
Subject(s) - annealing (glass) , materials science , ion , ion implantation , forming gas , interface (matter) , analytical chemistry (journal) , optoelectronics , crystallography , chemistry , composite material , environmental chemistry , organic chemistry , capillary number , capillary action