Open AccessElectrophysical and photocatalytic properties of SnO2-ZnO thin films prepared by sol-gel method
Author(s) -
V. Yu Storozhenko,
Maria G. Volkova,
Yu. N. Varzarev,
A.P. Starnikova,
Victor Petrov,
Е. М. Bayan
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/2086/1/012217
Subject(s) - hysteresis , materials science , sol gel , thin film , photocatalysis , adsorption , desorption , electron , chemical engineering , recombination , analytical chemistry (journal) , nanotechnology , chemistry , condensed matter physics , catalysis , chromatography , biochemistry , physics , quantum mechanics , engineering , gene
Electrophysical properties of SnO 2 -ZnO thin films prepared by sol-gel method have been studied. The resistance of thin films have a temperature hysteresis, the films resistance decreases up to two times when the temperature reaches 210-300 °C and returns to its initial value when cooling down to 90-30 °C. That phenomenon can be explained by the processes of thermal generation - recombination of electrons, and adsorption - desorption of oxygen on the surface of the films.