Open AccessIn situ Investigation of Individual Filament Growth in Conducting Bridge Memristor by Contact Scanning Capacitance Microscopy
Author(s) -
M A Ryabova,
Д. А. Антонов,
А. В. Круглов,
И. Н. Антонов,
Д. О. Филатов,
О. Н. Горшков
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/2086/1/012205
Subject(s) - protein filament , capacitance , materials science , scanning capacitance microscopy , optical microscope , nanotechnology , in situ , scanning probe microscopy , nanometre , microscopy , conductive atomic force microscopy , memristor , differential capacitance , optoelectronics , composite material , analytical chemistry (journal) , optics , atomic force microscopy , scanning electron microscope , chemistry , electrode , electrical engineering , scanning confocal electron microscopy , physics , engineering , organic chemistry , chromatography
We report on the application of Contact Scanning Capacitance Microscopy (CSCM) to trace the growth of an individual Ni filament in a ZrO 2 (Y) film on a Ni sublayer (together with a conductive Atomic Force Microscope probe composing a nanometer-sized virtual memristor). An increasing of the filament length in the course of electro-forming results in an increasing of the capacitance between the probe and the sample, which can be detected by CSCM technique. This way, the filament growth can be monitored in real time in situ.