Open AccessSingle-step alkaline etching of deep silicon cavities for chip-scale atomic clock technology
Author(s) -
Ivan Komarevtsev,
Y Akulshin,
A Kazakin
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/2086/1/012185
Subject(s) - silicon , etching (microfabrication) , materials science , silicon nitride , wafer , reactive ion etching , optoelectronics , dry etching , chip , microelectromechanical systems , nanotechnology , electrical engineering , engineering , layer (electronics)
This paper presents the results of experiments on the development of the technology of MEMS alkali vapor cells for a miniature quantum frequency standard. The classical design of a two-chamber silicon cell containing an optical chamber, shallow filtration channels and a technical container for a solid-state alkali source was implemented in a single-step process of wet anisotropic silicon etching. To prevent the destruction of the filtration channels during etching of the through silicon cavities, the shapes of the compensating structures at the convex corners of the silicon nitride mask were calculated and the composition of the silicon etchant was experimentally found. The experiments results were used in the manufacture of chip-scale atomic clock cells containing vapors of 87 Rb or 133 Cs isotopes in the neon atmosphere.