Open AccessCharacterization of In(Ga,Al)As/GaAs metamorphic heterostructures for mid-IR emitters by FTIR photoreflectance spectroscopy
Author(s) -
Д. Д. Фирсов,
M. Yu. Chernov,
В. А. Соловьев,
О. С. Комков
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/2086/1/012140
Subject(s) - heterojunction , materials science , spectroscopy , optoelectronics , fourier transform infrared spectroscopy , substrate (aquarium) , spectral line , metamorphic rock , infrared spectroscopy , infrared , optics , chemistry , physics , geology , geochemistry , oceanography , organic chemistry , quantum mechanics , astronomy
Infrared photoreflectance (PR) spectra of In(Ga,Al)As/GaAs metamorphic heterostructures have been obtained using a novel photomodulation FTIR spectroscopy technique. An analysis of the PR spectra features allowed us to estimate the critical point energies corresponding to the direct interband transitions in various regions of the In(Ga,Al)As heterostructures, and distinguish the PR signals originating from Fabry-Perot interference. Observation of Franz-Keldysh oscillations originating from the InAlAs virtual substrate and an InGaAs waveguide layer has enabled determination of the built-in electric field intensities within the heterostructures. The obtained results open up possibilities for contactless control of free carrier concentration in In(Ga,Al)As/GaAs metamorphic heterostructures developed for growth of emitters of mid-IR spectral range.