Open AccessSeveral processes participating in a decrease and the droop of external quantum efficiency in green InGaN/GaN MQW structures
Author(s) -
N. A. Talnishnikh,
Е. И. Шабунина,
N. M. Shmidt,
А. Е. Иванов
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/2086/1/012104
Subject(s) - voltage droop , quantum efficiency , charge (physics) , materials science , optoelectronics , light emitting diode , quantum , grain boundary , diode , condensed matter physics , physics , voltage , quantum mechanics , metallurgy , microstructure , voltage source
The obtained experimental results allow us to clarify the nature of mechanisms related to the presence of cations in disordered InGaN alloy and hetero-interfaces. The capture of charge carriers by cations reduces the external quantum efficiency (EQE) in green MQWs at j 10 A/cm 2 . At j > 40 A/cm 2 the droop associated with interactions between charge carriers and dislocations and grain boundaries takes place.