Open AccessSimulation of double-junction III-phosphides/silicon solar cells
Author(s) -
A A Rakitina,
A. S. Gudovskikh
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/2086/1/012094
Subject(s) - phosphide , p–n junction , ternary operation , materials science , silicon , optoelectronics , indium phosphide , charge carrier , energy conversion efficiency , semiconductor , gallium arsenide , metallurgy , computer science , nickel , programming language
The characteristics of two-junction solar cells were calculated in this work, in which phosphides of group III are used as the top junction, and Si as the bottom junction. The following ternary phosphide compounds Ga 0.52 In 0.48 P (1.85 eV), GaPN 0.02 (1.9 eV), and GaPN 0.04 (1.7 eV) were considered as the active material of the top junction. The use of GaPN 0.04 allowed one to reach the current matching with the bottom Si junction and an efficiency of 30% was achieved. In addition, the influence of the layer thickness, the lifetime of minority charge carriers and the electronic affinity on the efficiency of solar energy conversion were considered.