Open AccessStudy of GaP/Si electron-selective contact deposited by plasma
Author(s) -
A. A. Maksimova,
Artem Baranov,
A. V. Uvarov,
A. S. Gudovskikh,
D. A. Kudryashov,
И. А. Морозов,
Monika Bogdanova
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/2086/1/012091
Subject(s) - doping , materials science , valence band , offset (computer science) , band gap , optoelectronics , electron , solar cell , band offset , nanotechnology , computer science , physics , quantum mechanics , programming language
The article is based on an important characterization task to accurately evaluate the properties of the layers, their interfaces with c-Si, and to select the best candidates to integrate them into a c-Si-based solar cell. The work has shown that GaP could be doped with n-type doping, thus providing a selective contact for the electrons, and has a significant valence band offset with c-Si, making it an excellent candidate as a selective contact, without requiring an additional ITO layer.