Open AccessComputer simulations of solar cells based on silicon/boron phosphide selective contacts
Author(s) -
S Y Kiyanitsyn,
A. S. Gudovskih
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/2086/1/012087
Subject(s) - materials science , silicon , boron , interface (matter) , phosphide , optoelectronics , solar cell , indium phosphide , photovoltaic system , engineering physics , chemistry , gallium arsenide , composite material , electrical engineering , metallurgy , engineering , contact angle , nickel , organic chemistry , sessile drop technique
Silicon solar cells with selective contacts based on boron phosphide (BP) demonstrate a high potential according to simulation. However, the influence of defects created at the BP/Si interface during BP deposition is a critical issue for solar cell performance. The computer simulations were performed to understand how the defects in the near-surface region and at the interface affect the photovoltaic properties. Calculations of the dependence of the characteristics of solar cells on parameters such as the density of interface states, the concentration of defects in the near-surface region, and its width were made.