Open AccessDetermination of hole diffusion length in n-GaN
Author(s) -
D. S. Arteev,
A. V. Sakharov,
А. Е. Николаев,
Е. Е. Заварин,
W. V. Lundin,
A. F. Tsatsul'nikov
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/2086/1/012075
Subject(s) - photoluminescence , diffusion , materials science , spontaneous emission , excitation , recombination , saturation (graph theory) , reciprocity (cultural anthropology) , radiative transfer , condensed matter physics , optoelectronics , atomic physics , molecular physics , optics , physics , chemistry , thermodynamics , mathematics , quantum mechanics , psychology , social psychology , laser , biochemistry , combinatorics , gene
The paper presents the derivation of a model for minority carriers collection based on the reciprocity theorem and its application for determination of hole diffusion length in n-GaN by means of photoluminescence. The estimated hole diffusion lengths at room temperature are 110 nm and 194 nm in the case of low and high excitation, respectively, which could be explained by saturation of non-radiative recombination centers in bulk GaN and at the surface with photogenerated carriers.