Open AccessGaN power IC normally-on and normally-off transistors technology and simulation
Author(s) -
В. И. Егоркин,
В. А. Беспалов,
O. B. Kukhtyaeva,
V. E. Zemlyakov,
В. В. Капаев,
A. A. Zaitsev
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/2086/1/012058
Subject(s) - transistor , materials science , reliability (semiconductor) , optoelectronics , power semiconductor device , layer (electronics) , channel (broadcasting) , power (physics) , electrical engineering , electronic engineering , voltage , nanotechnology , engineering , physics , quantum mechanics
GaN technology has been waiting to be widely adopted because of its specific technical requirements. Integration of transistor and driver in a single die will enable to overcome problems with gate driving, high cost of circuit and low device reliability. This paper demonstrates technology of GaN-on-Si normally-on and normally-off transistor with different p-GaN cap-layer thickness as well as simulation of these devices. The simulation data confirm experimental results. P-GaN cap-layer thickness affects the current channel density: the more p-GaN thickness, the less channel density. The fabricated transistors have a maximum drain current in open state of about 800 mA/mm.