Open AccessStudy of characteristics of n-p-n type bipolar power transistor in small-sized metalpolymeric package type SOT-89
Author(s) -
D A Knyaginin,
E. A. Kulchenkov,
S. B. Rybalka,
A.M. Demidov
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/2086/1/012057
Subject(s) - transistor , bipolar junction transistor , spice , type (biology) , multiple emitter transistor , power semiconductor device , static induction transistor , transistor model , power (physics) , materials science , heterostructure emitter bipolar transistor , electrical engineering , optoelectronics , field effect transistor , engineering , physics , voltage , thermodynamics , ecology , biology
In this study the input, output and current gain characteristics of silicon n-p-n type medium power bipolar junction transistors KT242A91 made by the "GRUPPA KREMNY EL" in modern small-sized metalpolymeric package type (SOT-89) have been obtained. The SPICE model that allows simulating realistic transistor behaviour of n-p-n type transistor KT242A91 has been proposed. It is shown that established experimental characteristics for KT242A91 transistor correspond to similar transistor’s type characteristics.