Open AccessMonolithic transistor switch for microwave radiometry
Author(s) -
В. Г. Тихомиров,
Yu. V. Solov’ev,
А. Г. Гудков,
M. M. Popov,
S. V. Chizhikov
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/2086/1/012049
Subject(s) - microwave , monolithic microwave integrated circuit , high electron mobility transistor , transistor , gallium nitride , optoelectronics , materials science , electrical engineering , electronic engineering , computer science , engineering , telecommunications , nanotechnology , layer (electronics) , amplifier , cmos , voltage
Modern medical microwave diagnostic equipment requires the application of solutions related to the compactness of the developed devices and high performance. Ensuring these requirements is possible by using a modern semiconductor component base based on A 3 B 5 compounds. One of the promising materials for this purpose is gallium nitride. The paper presents the design and manufacturing technology of one of the main control elements of the microwave signal in microwave radiothermometer - monolithic AlGaN/GaN/SiC HEMT SPDT transistor switch.