Open AccessOptical and structural properties of the GaAs heterostructures grown using AlGaAs superlattice buffer layer on compliant Si(100) substrates with the preformed porous-Si (por-Si) layer.
Author(s) -
D. S. Zolotukhin,
П. В. Середин,
A. S. Lenshin,
D. L. Goloshchapov,
Y Hudyakov,
Oday Ali,
I. N. Arsentyev,
H. Leiste
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/2086/1/012046
Subject(s) - photoluminescence , materials science , buffer (optical fiber) , heterojunction , superlattice , layer (electronics) , metalorganic vapour phase epitaxy , epitaxy , substrate (aquarium) , optoelectronics , analytical chemistry (journal) , nanotechnology , chemistry , telecommunications , oceanography , chromatography , geology , computer science
360 nm and 700 nm thick GaAs layers were grown by MO MOCVD growth technique directly on compliant Si (100) substrate and on supper-lattice (SL) AlGaAs buffer layer. The XRD study revealed better structural quality for the sample grown on SL / por-Si buffer. AFM study revealed a smoother sample surface with blocks of more regular rectangular shape and larger size as well. Photoluminescence spectra of the samples revealed an energy shift of PL maximum intensity for both samples. Sample grown on SL buffer also showed higher PL intensity corresponding to better crystalline perfection.