
Investigation of resistive switching in Ag/Ge/Si(001) stack by conductive atomic force microscopy
Author(s) -
V. A. Vorontsov,
Д. А. Антонов,
А. В. Круглов,
И. Н. Антонов,
М. Е. Шенина,
В. Е. Котомина,
В. Г. Шенгуров,
С. А. Денисов,
V. Yu. Chalkov,
Д. А. Павлов,
Д. О. Филатов,
О. Н. Горшков
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/2086/1/012043
Subject(s) - materials science , conductive atomic force microscopy , layer (electronics) , electrical conductor , dislocation , stack (abstract data type) , sputtering , atomic force microscopy , resistive touchscreen , electrode , resistive random access memory , optoelectronics , nanotechnology , composite material , thin film , chemistry , engineering , computer science , electrical engineering , programming language
We report on an experimental study of resistive switching (RS) of individual dislocations in Ag/Ge/Si(001) memristors by combined grazing incidence ion sputtering of the Ag electrodes and application of Conductive Atomic Force Microscopy to provide an electrical contact to individual Ag-filled dislocations in the Ge layer. Two types of RS were observed corresponding to two different RS mechanisms: (i) drift of Ag + ions inside the dislocation cores and (ii) RedOx reactions in residual GeO x in the etch pits on the Ge layer surface.