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Author(s)
V. A. Vorontsov,
Д. А. Антонов,
А. В. Круглов,
И. Н. Антонов,
М. Е. Шенина,
В. Е. Котомина,
В. Г. Шенгуров,
С. А. Денисов,
V. Yu. Chalkov,
Д. А. Павлов,
Д. О. Филатов,
О. Н. Горшков
Publication year2021
Publication title
journal of physics. conference series
Resource typeJournals
PublisherIOP Publishing
We report on an experimental study of resistive switching (RS) of individual dislocations in Ag/Ge/Si(001) memristors by combined grazing incidence ion sputtering of the Ag electrodes and application of Conductive Atomic Force Microscopy to provide an electrical contact to individual Ag-filled dislocations in the Ge layer. Two types of RS were observed corresponding to two different RS mechanisms: (i) drift of Ag + ions inside the dislocation cores and (ii) RedOx reactions in residual GeO x in the etch pits on the Ge layer surface.
Subject(s)atomic force microscopy , chemistry , composite material , computer science , conductive atomic force microscopy , dislocation , electrical conductor , electrical engineering , electrode , engineering , layer (electronics) , materials science , nanotechnology , optoelectronics , programming language , resistive random access memory , resistive touchscreen , sputtering , stack (abstract data type) , thin film
Language(s)English
SCImago Journal Rank0.21
H-Index85
eISSN1742-6596
pISSN1742-6588
DOI10.1088/1742-6596/2086/1/012043
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