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open-access-imgOpen AccessInvestigation of resistive switching in Ag/Ge/Si(001) stack by conductive atomic force microscopy
Author(s)
V.A. Vorontsov,
D. A. Antonov,
A. V. Kruglov,
Ivan Antonov,
M. E. Shenina,
V. E. Kotomina,
V. G. Shengurov,
S. A. Denisov,
V. Yu. Chalkov,
D. A. Pavlov,
D. O. Filatov,
O. N. Gorshkov
Publication year2021
Publication title
journal of physics
Resource typeJournals
PublisherIOP Publishing
We report on an experimental study of resistive switching (RS) of individual dislocations in Ag/Ge/Si(001) memristors by combined grazing incidence ion sputtering of the Ag electrodes and application of Conductive Atomic Force Microscopy to provide an electrical contact to individual Ag-filled dislocations in the Ge layer. Two types of RS were observed corresponding to two different RS mechanisms: (i) drift of Ag + ions inside the dislocation cores and (ii) RedOx reactions in residual GeO x in the etch pits on the Ge layer surface.
Subject(s)atomic force microscopy , chemistry , composite material , computer science , conductive atomic force microscopy , dislocation , electrical conductor , electrical engineering , electrode , engineering , layer (electronics) , materials science , nanotechnology , optoelectronics , programming language , resistive random access memory , resistive touchscreen , sputtering , stack (abstract data type) , thin film
Language(s)English
SCImago Journal Rank0.21
H-Index85
eISSN1742-6596
pISSN1742-6588
DOI10.1088/1742-6596/2086/1/012043

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