Open AccessMBE growth of AlGaAs/Ge/AlGaAs core-shell nanowire
Author(s) -
A N Terpitskiy,
I. V. Ilkiv,
K. P. Kotlyar,
Д. А. Кириленко,
G. É. Cirlin
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/2086/1/012039
Subject(s) - molecular beam epitaxy , nanowire , germanium , materials science , core (optical fiber) , hexagonal crystal system , raman spectroscopy , characterization (materials science) , optoelectronics , quantum dot , epitaxy , shell (structure) , crystallography , nanotechnology , chemistry , optics , silicon , layer (electronics) , physics , composite material
Heterostructured AlGaAs/Ge/AlGaAs core-multishell nanowires having hexagonal crystal structure were synthesized by molecular beam epitaxy. Formation of 2-3 nm Ge quantum well structure was demonstrated. Raman characterization revealed a 200 cm −1 peak corresponded to hexagonal phases of germanium.