Open AccessFeatures of the MBE growth of nanowires with quantum dots on the silicon surface
Author(s) -
R. R. Reznik,
K. P. Kotlyar,
А. И. Хребтов,
G. É. Cirlin
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/2086/1/012032
Subject(s) - quantum dot , nanowire , materials science , silicon , semiconductor , nanotechnology , nanostructure , base (topology) , optoelectronics , silicon nanowires , mathematical analysis , mathematics
The development of a new semiconductor element base is necessary to create a new generation of applications. At present time, the synthesis of high-quality hybrid nanostructures based on III-V quantum dots in the body of nanowires of a wide range of material systems is an urgent and important task. In work hybrid III-V nanostructures based on QDs in the body of NWs in GaP/GaAs and AlGaP/InGaP material systems were synthesized in on silicon substrates and their physical properties were investigated.